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| NTGS3443B Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 Features * * * * Low RDS(on) in TSOP-6 Package 2.5 V Gate Rating Fast Switching This is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(ON) MAX 60 mW @ -4.5 V -20 V 90 mW @ -2.7 V 100 mW @ -2.5 V P-Channel 1256 ID MAX -3.7 A -3.1 A -3.0 A Applications * Optimized for Battery and Load Management Applications in * * * Portable Equipment Li Ion Battery Linear Mode Charging High Side Load Switch HDD Switching Circuits, Camera Phone, etc. MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State tv5s Power Dissipation (Note 1) Steady State tv5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, TSTG TL ID TA = 25C TA = 85C TA = 25C PD TA = 25C 1.6 -2.7 -2.0 0.7 -15 -55 to 150 260 A W A C C 1 Symbol VDSS VGS ID Value -20 $12 -3.7 -2.7 -4.2 1.25 W TSOP-6 CASE 318G STYLE 1 1 SB = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) 4 A Unit V V 3 MARKING DIAGRAM SB MG G Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8" from case for 10 s) PIN ASSIGNMENT Drain Drain Source 654 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size. (Cu area = 1.127 in sq [2 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size. (Cu area = 0.0775 in sq) 1 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS3443BT1G Package Shipping TSOP-6 3000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2007 1 November, 2007 - Rev. 0 Publication Order Number: NTGS3443B/D NTGS3443B THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t v 5 s (Note 3) Junction-to-Ambient - Steady State (Note 4) Symbol RqJA RqJA RqJA Value 100 80 190 C/W Unit 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq). ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, ID = -250 mA ID = -250 mA, Reference 25C VGS = 0 V, VDS = -20 V TJ = 25C TJ = 70C -20 -15 -1.0 -5.0 $0.1 mA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VDS = 0 V, VGS = 12 V VGS = VDS, ID = -250 mA VGS(TH) VGS(TH)/TJ RDS(on) -0.6 3.3 -1.4 V mV/C VGS = -4.5 V, ID = -3.7 A VGS = -2.7 V, ID = -3.1 A VGS = -2.5 V, ID = -3.0 A 45 65 70 7.0 60 90 100 mW Forward Transconductance gFS VDS = -10 V, ID =-3.7 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = -1.7 A TJ = 25C -0.8 15 -1.2 30 V ns td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -10 V, ID = -1.0 A, RG = 6.0 W 10 7.0 47 25 15 11 70 40 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = -4.5 V, VDS = -10 V; ID = -3.7 A VGS = 0 V, f = 1 MHz, VDS = -10 V 819 157 103 8.0 0.6 1.7 2.4 11 W 11 nC pF VGS = 0 V, dIS/dt = 100 A/ms, IS = -1.7 A 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTGS3443B TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 20 -ID, DRAIN CURRENT (AMPS) -4.5 V -3.5 V -4 V 20 TJ = 25C -3 V -ID, DRAIN CURRENT (AMPS) 18 16 14 12 10 8 6 4 2 0 0.5 TJ = 25C TJ = 125C TJ = -55C 1 1.5 2 2.5 3 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS = -5 V 16 12 -2.5 V 8 -2 V 4 -1.5 V 0 0 1 2 3 4 5 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.20 ID = -3.7 A TJ = 25C 0.16 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 Figure 2. Transfer Characteristics TJ = 25C 0.12 VGS = -2.5 V VGS = -2.7 V 0.08 VGS = -4.5 V 0.04 0.00 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 8 12 16 20 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ID = -3.7 A VGS = -4.5 V C, CAPACITANCE (pF) 1200 1000 800 600 400 200 Figure 4. On-Resistance vs. Drain Current and Gate Voltage Ciss VGS = 0 V TJ = 25C f = 1 MHz Coss Crss 0 0 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTGS3443B TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) 7 QT 6 -VDS 5 4 6 3 2 1 0 0 2 4 6 8 10 QG, TOTAL GATE CHARGE (nC) VDS = -10 V ID = -3.7 A TJ = 25C QGS QGD 4 2 0 -VGS 10 8 12 30 -I S, SOURCE CURRENT (AMPS) VGS = 0 V -V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10 TJ = 150C TJ = 25C 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current 1.4 ID = -250 mA 1.2 POWER (WATTS) -25 0 25 50 75 100 125 150 1.0 -VGS(th) (V) 0.8 0.6 0.4 0.2 0.0 -50 60 50 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 TJ, JUNCTION TEMPERATURE (C) SINGLE PULSE TIME (s) Figure 9. Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation 100 -ID, DRAIN CURRENT (A) 10 100 ms 1 ms 10 ms VGS = -12 V SINGLE PULSE 0.1 TC = 25C RDS(on) LIMIT dc Thermal Limit Package Limit 0.01 0.1 1 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1 100 Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTGS3443B R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE NORMALIZED (C/W) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.001 0.01 0.1 PULSE TIME (s) 1 10 100 1000 Test Type = 1 sq in 2 oz RqJA = 1 sq in 2 oz P(pk) 0.01 0.01 0.0001 Figure 12. FET Thermal Response http://onsemi.com 5 NTGS3443B PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE S D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - 6 5 1 2 4 HE E 3 b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 SOLDERING FOOTPRINT* 2.4 0.094 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTGS3443B/D |
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